GaAs基图形衬底上GaAs 和InAs 纳米结构的控位生长


Autoria(s): 周慧英
Contribuinte(s)

王占国

Data(s)

2007

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

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Identificador

http://ir.semi.ac.cn/handle/172111/5827

http://www.irgrid.ac.cn/handle/1471x/60475

Idioma(s)

中文

Fonte

周慧英.GaAs基图形衬底上GaAs 和InAs 纳米结构的控位生长.[博士].北京.中国科学院半导体研究所.2007

Palavras-Chave #材料物理与化学
Tipo

学位论文