MOCVD高阻GaN材料中的深能级研究


Autoria(s): 方测宝
Contribuinte(s)

王晓亮

Data(s)

2007

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:51Z (GMT). No. of bitstreams: 1 disk/eh2007/fcb.pdf: 2807445 bytes, checksum: e003a2c0de4d5ca4aff3ca49e0995add (MD5) Previous issue date: 2007

Identificador

http://ir.semi.ac.cn/handle/172111/5809

http://www.irgrid.ac.cn/handle/1471x/60466

Idioma(s)

中文

Fonte

方测宝.MOCVD高阻GaN材料中的深能级研究.[博士].北京.中国科学院半导体研究所.2007

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文