高Al组分AlGaN薄膜的MOCVD生长和特性研究


Autoria(s): 王小兰
Contribuinte(s)

梁骏吾

杨辉

赵德刚

Data(s)

2007

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:42Z (GMT). No. of bitstreams: 1 disk/eh2007/wxl.pdf: 6134108 bytes, checksum: dc653f91aaca66336112952bf877ff77 (MD5) Previous issue date: 2007

Identificador

http://ir.semi.ac.cn/handle/172111/5739

http://www.irgrid.ac.cn/handle/1471x/60431

Idioma(s)

中文

Fonte

王小兰.高Al组分AlGaN薄膜的MOCVD生长和特性研究.[博士].北京.中国科学院半导体研究所.2007

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文