宽带隙半导体材料SiC 外延生长工艺的研究
| Contribuinte(s) |
孙国胜 |
|---|---|
| Data(s) |
2007
|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:36:38Z (GMT). No. of bitstreams: 1 disk/eh2007/ljy.pdf: 1571467 bytes, checksum: 9ac0c95864ebdf5f71c6c11d5af51690 (MD5) Previous issue date: 2007 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
李家业.宽带隙半导体材料SiC 外延生长工艺的研究.[硕士].北京.中国科学院半导体研究所.2007 |
| Palavras-Chave | #材料物理与化学 |
| Tipo |
学位论文 |
