全耗尽SOI MOSFET的制作及其辐射加固的研究


Autoria(s): 王宁娟
Contribuinte(s)

刘忠立

Data(s)

2007

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:38Z (GMT). No. of bitstreams: 1 disk/eh2007/wnj.pdf: 2425728 bytes, checksum: fd61e1a1290178d8a48adf01797acbc5 (MD5) Previous issue date: 2007

Identificador

http://ir.semi.ac.cn/handle/172111/5701

http://www.irgrid.ac.cn/handle/1471x/60412

Idioma(s)

中文

Fonte

王宁娟.全耗尽SOI MOSFET的制作及其辐射加固的研究.[博士].北京.中国科学院半导体研究所.2007

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文