GaAs 基半导体器件的高频特性研究


Autoria(s): 彭红玲
Contribuinte(s)

牛智川

Data(s)

2007

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:37Z (GMT). No. of bitstreams: 1 disk/eh2007/phl.pdf: 1593774 bytes, checksum: f6727165883333787e91ead72ac33d05 (MD5) Previous issue date: 2007

Identificador

http://ir.semi.ac.cn/handle/172111/5685

http://www.irgrid.ac.cn/handle/1471x/60404

Idioma(s)

中文

Fonte

彭红玲.GaAs 基半导体器件的高频特性研究.[博士].北京.中国科学院半导体研究所.2007

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文