红外线探测材料GaAs 基InAsSb 薄膜的生长和性质研究


Autoria(s): 彭长涛
Contribuinte(s)

陈诺夫

Data(s)

2006

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

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Identificador

http://ir.semi.ac.cn/handle/172111/5649

http://www.irgrid.ac.cn/handle/1471x/60386

Idioma(s)

中文

Fonte

彭长涛.红外线探测材料GaAs 基InAsSb 薄膜的生长和性质研究.[博士].北京.中国科学院半导体研究所.2006

Palavras-Chave #材料物理与化学
Tipo

学位论文