GaN上AiGaN薄膜的MOCVD生长及性质研究
| Contribuinte(s) |
杨辉 |
|---|---|
| Data(s) |
2005
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:36:18Z (GMT). No. of bitstreams: 1 disk/eh2005/sq.pdf: 7294799 bytes, checksum: 520dd35c614eef321c3ea3c5aeb60750 (MD5) Previous issue date: 2005 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
孙钱.GaN上AiGaN薄膜的MOCVD生长及性质研究.[硕士].北京.中国科学院半导体研究所.2005 |
| Palavras-Chave | #微电子学与固体电子学 |
| Tipo |
学位论文 |
