4H-SiC 同质外延生长与器件制作


Autoria(s): 高欣
Contribuinte(s)

李晋闽

孙国胜

Data(s)

2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

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Identificador

http://ir.semi.ac.cn/handle/172111/5485

http://www.irgrid.ac.cn/handle/1471x/60304

Idioma(s)

中文

Fonte

高欣.4H-SiC 同质外延生长与器件制作.[博士].北京.中国科学院半导体研究所.2005

Palavras-Chave #材料物理与化学
Tipo

学位论文