稀磁半导体GaMnSb 材料的制备和性质研究


Autoria(s): 陈晨龙
Contribuinte(s)

陈诺夫

Data(s)

2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:06Z (GMT). No. of bitstreams: 1 disk/eh2005/ccl.pdf: 2210870 bytes, checksum: c36af9b70fd4afc5bdbcdacdb7b64f29 (MD5) Previous issue date: 2005

Identificador

http://ir.semi.ac.cn/handle/172111/5387

http://www.irgrid.ac.cn/handle/1471x/60255

Idioma(s)

中文

Fonte

陈晨龙.稀磁半导体GaMnSb 材料的制备和性质研究.[博士].北京.中国科学院半导体研究所.2005

Palavras-Chave #材料物理与化学
Tipo

学位论文