GaAs 基InAlAs/InGaAs MHEMT材料性质与器件制作


Autoria(s): 崔利杰
Contribuinte(s)

曾一平

Data(s)

2004

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:05Z (GMT). No. of bitstreams: 0 Previous issue date: 2004

Identificador

http://ir.semi.ac.cn/handle/172111/5371

http://www.irgrid.ac.cn/handle/1471x/60247

Idioma(s)

中文

Fonte

崔利杰.GaAs 基InAlAs/InGaAs MHEMT材料性质与器件制作.[博士后].北京.中国科学院半导体研究所.2004

Palavras-Chave #材料物理与化学
Tipo

学位论文