AlInGaN 四元合金及InGaN 基发光二极管的外延生长和性质
| Contribuinte(s) |
杨辉 |
|---|---|
| Data(s) |
2004
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:36:00Z (GMT). No. of bitstreams: 1 disk/eh2004/ljp.pdf: 1999640 bytes, checksum: 0d6d6cc89f7643ef0744e602d70cbde9 (MD5) Previous issue date: 2004 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
刘建平.AlInGaN 四元合金及InGaN 基发光二极管的外延生长和性质.[博士].北京.中国科学院半导体研究所.2004 |
| Palavras-Chave | #微电子学与固体电子学 |
| Tipo |
学位论文 |
