GaSb 和GaN 基稀磁半导体的制备和性质研究
| Contribuinte(s) |
陈诺夫 |
|---|---|
| Data(s) |
2004
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:35:55Z (GMT). No. of bitstreams: 1 disk/eh2004/zfq.pdf: 2408038 bytes, checksum: e0195a7b62a4398fb2a733ac63747dc2 (MD5) Previous issue date: 2004 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
张富强.GaSb 和GaN 基稀磁半导体的制备和性质研究.[博士].北京.中国科学院半导体研究所.2004 |
| Palavras-Chave | #材料物理与化学 |
| Tipo |
学位论文 |
