多型体材料SiC和GaN外延薄膜的相及缺陷分析


Autoria(s): 郑新和
Contribuinte(s)

梁骏吾

杨辉

Data(s)

2002

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

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Identificador

http://ir.semi.ac.cn/handle/172111/5111

http://www.irgrid.ac.cn/handle/1471x/60117

Idioma(s)

中文

Fonte

郑新和.多型体材料SiC和GaN外延薄膜的相及缺陷分析.[博士].北京.中国科学院半导体研究所.2002

Palavras-Chave #材料物理与化学
Tipo

学位论文