碳化硅(6H-SiC)器件的研究


Autoria(s): 王姝睿
Contribuinte(s)

刘忠立

Data(s)

2001

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:35:36Z (GMT). No. of bitstreams: 1 disk/eh2001/wsr.pdf: 2230302 bytes, checksum: ead19880a072b50fb26c1b886730a273 (MD5) Previous issue date: 2001

Identificador

http://ir.semi.ac.cn/handle/172111/5057

http://www.irgrid.ac.cn/handle/1471x/60090

Idioma(s)

中文

Fonte

王姝睿.碳化硅(6H-SiC)器件的研究.[博士].北京.中国科学院半导体研究所.2001

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文