GaAs基应变自组装InxGa1-xAs量子点的生长、结构和光学性质的研究
Contribuinte(s) |
王占国 |
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Data(s) |
2000
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Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:35:26Z (GMT). No. of bitstreams: 1 disk/eh2000/jwh.pdf: 6970604 bytes, checksum: a21d633ee9ed306e22d03ac024fdccef (MD5) Previous issue date: 2000 |
Identificador | |
Idioma(s) |
中文 |
Fonte |
姜卫红.GaAs基应变自组装InxGa1-xAs量子点的生长、结构和光学性质的研究.[博士].北京.中国科学院半导体研究所.2000 |
Palavras-Chave | #半导体材料 |
Tipo |
学位论文 |