GaAs基应变自组装InxGa1-xAs量子点的生长、结构和光学性质的研究


Autoria(s): 姜卫红
Contribuinte(s)

王占国

Data(s)

2000

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:35:26Z (GMT). No. of bitstreams: 1 disk/eh2000/jwh.pdf: 6970604 bytes, checksum: a21d633ee9ed306e22d03ac024fdccef (MD5) Previous issue date: 2000

Identificador

http://ir.semi.ac.cn/handle/172111/4967

http://www.irgrid.ac.cn/handle/1471x/60045

Idioma(s)

中文

Fonte

姜卫红.GaAs基应变自组装InxGa1-xAs量子点的生长、结构和光学性质的研究.[博士].北京.中国科学院半导体研究所.2000

Palavras-Chave #半导体材料
Tipo

学位论文