不同类型蒸发源对平面夹具薄膜均匀性的影响

分析了几种可能的实际蒸发源与薄膜均匀性的关系，其中包括扩展的平面蒸发源和曲面蒸发源。通过实验论证了薄膜均匀性对蒸发源尺寸和蒸发特性的依赖关系。得到的分析结果表明：当蒸发源半径和夹具高度的比值小于1／17时，蒸发源可以被视为一个点面源；大于1／10时，应当把蒸发源视为面面源进行考虑。当挖坑深度和蒸发源半径的比值介于0和0．5之间时，挖坑对薄膜均匀性造成的影响基本可以忽略；大于0．6时，挖坑效应明显影响薄膜的均匀性。

Several evaporation sources,including the plane and spherical source,and their influence on film uniformity were studied.It is found that when the ratio between the radius of the source surface and the height of the substrate is less than 1/17,the area of the source surfaces can be ignored,and when ratio is greater than 1/10,the area of the source surface should be considered;When the ratio between the depth of the spherical surface and the radius of the source surface is less than 0.5,the spherical source has little effect on films uniformity compared with the plane source,and when the ratio is greater than 0.6,the influence of spherical surface source on films uniformity should be considered.Based on the study,the relation between the emission characteristic of sources and film uniformity was validated by experiments.