宽禁带氧化锌半导体薄膜的研究进展
Data(s) |
2005
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Resumo |
氧化锌作为新一代化合物半导体,其禁带宽度对应紫外光的波长。氧化锌薄膜有望开发蓝光、蓝绿光、紫外光等多种发光器件,具有广阔的应用前景。重点介绍了氧化锌薄膜的研究进展以及存在的问题,并对氧化锌薄膜的未来进行了展望。 As a new generation of compound semiconductor, zinc oxide has widegap. Zinc oxide thin film is a promising candidate for light emission devices for blue, blue-green, and UV regions. This paper presents the research progress, the existing problems and the prospects of zinc oxide functional thin films. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
洪瑞金;贺洪波;邵建达;范正修.宽禁带氧化锌半导体薄膜的研究进展,激光与光电子学进展,2005,42(2):41-44,37 |
Palavras-Chave | #光学薄膜 #宽禁带 #半导体薄膜 #氧化锌薄膜 #化合物半导体 #发光器件 #禁带宽度 #紫外光 #波长 #对应 #蓝光 #zinc oxide #functional thin films #UV emission |
Tipo |
期刊论文 |