Defect and structural imperfection effects on the electronic properties of BiTeI surfaces
| Data(s) |
03/12/2015
03/12/2015
24/07/2014
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| Resumo |
The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas |
| Identificador |
New Journal of Physics 16 2014 : (2014) // Article ID 075013 1367-2630 http://hdl.handle.net/10810/16331 10.1088/1367-2630/16/7/075013 |
| Idioma(s) |
eng |
| Publicador |
IOP Publishing |
| Relação |
http://iopscience.iop.org/article/10.1088/1367-2630/16/7/075013/meta;jsessionid=8A4313D016A422DF3E4F88D37EB26E11.c2.iopscience.cld.iop.org#artAbst |
| Direitos |
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI info:eu-repo/semantics/openAccess |
| Palavras-Chave | #electronic structure; ; ; #spin-orbit coupling #surface morphology #semiconductor surfaces #augmented-wave method #insulator #dynamics #metals #phase |
| Tipo |
info:eu-repo/semantics/article |
