国际主流光刻机研发的最新进展


Autoria(s): 袁琼雁; 王向朝
Data(s)

2007

Resumo

介绍了65 nm和45 nm节点国际主流光刻机的最新研发进展,重点分析了目前提高光刻机性能的关键技术,讨论了目前各公司的主流机型及其性能参数,最后简要介绍了下一代光刻技术的研究进展。

Recent development of the international mainstream lithographic tools for 65 nm and 45 nm processes is described The key technologies to improve performance of lithographic tools are analyzed. The dominating types of lithographic tools as well as their performame parameters are reviewed. Development status of the next generation lithography is discussed briefly.

Identificador

http://ir.siom.ac.cn/handle/181231/2232

http://www.irgrid.ac.cn/handle/1471x/10641

Idioma(s)

中文

Fonte

袁琼雁;王向朝.国际主流光刻机研发的最新进展,激光与光电子学进展,2007,44(1):57-64

Palavras-Chave #光刻机 #双工件台技术 #偏振光照明 #折反式物镜 #浸没式光刻 #下一代光刻 #lithographic tools #dual -stage technology #polarized illumination #catadioptric lens #immersion lithography #next generation lithography
Tipo

期刊论文