连续工作的体布拉格光栅外腔半导体激光器的温度特性

对体布拉格光栅(VBG)作为波长选择元件的外腔半导体激光器的波长锁定进行了实验研究,报道了连续运转输出功率达43.5 W的半导体激光器阵列的体布拉格光栅波长锁定实验结果,给出了不同热沉温度下的稳定的波长锁定结果,说明采用体布拉格光栅外腔将减小半导体激光器的温控压力。实验中发现,随着注入电流的增大,输出激光功率逐渐增强,锁定的激射波长向长波长方向偏移。在输出功率为34.5 W时,波长红移约0.56 nm。这一移动与实验测量的体布拉格光栅的温度特性相吻合。连续和高占空比运行、高输出功率情况下,在器件的设计和使用时应该考虑这一效应。

The wavelength stabilization of the external cavity semiconductor laser with volume Bragg grating (VBG) as wavelength selected element was studied experimentally, and the experimental results of a continuous wave semiconductor laser array whose output power is 43.5 W were reported. The results of wavelength stabilization with different heat sink temperature were given; it is shown that the temperature controlling pressure of the semiconductor laser could be reduced efficiently. The red shifting of the locked wavelength was observed at this experiment, due to the output power increasing caused by the driving current rising. When the output power is increased to 34.5 W from zero, the red shift is about 0.56 nm, which is in accordance with the measured temperature characteristic of the VBG. The effect of the laser should be considered in the design and applications of the high power external cavity semiconductor laser, which is working at continuous wave or high duty cycle.