飞秒脉冲波列激发的半导体量子阱中再发射场的相位演变


Autoria(s): 罗建; 龚尚庆; 钮月萍; 宋晓虹; 钱军; 李儒新
Data(s)

2007

Resumo

本文研究了在被飞秒脉冲波列激发的半导体量子阱中再发射场的相位性质。再发射场的相位演化受入射脉冲波列的相对相位控制。对于所有的奇数次入射脉冲激发,再发射场与入射场相位演化是:反相到同相再到反相;但是对于所有的偶数次入射脉冲激发,情况发生了反转,即再发射场与入射场相位演化是:同相到反相再到同相。

Property of the phase of the reemitted field in the semiconductor quantum wells (QWs) excited by femtosecond pulse train is investigated. It is shown that the phase evolution of the reemitted field is controlled by the relative phase between the successive pulses of the incident train. For all the odd pulses excitation, the reemitted field is from out-of-phase to in-phase, then again to out-of-phase with the incident pulses, whereas for all the even pulses excitation, the situation is the opposite, i.e., it is from in-phase to out-of-phase, then again to in-phase with the incident pulses.

Identificador

http://ir.siom.ac.cn/handle/181231/420

http://www.irgrid.ac.cn/handle/1471x/9565

Idioma(s)

英语

Fonte

罗建;龚尚庆;钮月萍;宋晓虹;钱军;李儒新.飞秒脉冲波列激发的半导体量子阱中再发射场的相位演变,Chin. Opt. Lett.,2007,5(5):304-307

Palavras-Chave #激光技术;激光物理与基本理论 #脉冲波列 #量子阱 #再发射场 #相对相位 #Ultrashort pulses
Tipo

期刊论文