Germanane: a Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs


Autoria(s): Ghosh, Ram Krishna; Brahma, Madhuchhanda; Mahapatra, Santanu
Data(s)

2014

Resumo

We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we study the real band structure, the effective mass variation, and the complex band structure of unstrained Germanane by density-functional theory. The chair morphology turns out to be a more effective channel material for switching devices than the boat morphology. Furthermore, we study the effect of elastic strain, van der Waals force, and vertical electric field on these band structure properties. Due to its very low effective mass with relatively high-energy bandgap, in comparison with the other 2-D materials, Germanane appears to provide superior performance in switching device applications.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/49536/1/iee_tra_ele_dev_61-7_2309.pdf

Ghosh, Ram Krishna and Brahma, Madhuchhanda and Mahapatra, Santanu (2014) Germanane: a Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (7). pp. 2309-2315.

Publicador

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Relação

http://dx.doi.org/10.1109/TED.2014.2325136

http://eprints.iisc.ernet.in/49536/

Palavras-Chave #Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Tipo

Journal Article

PeerReviewed