Study on important diffusion parameters of binary Ni3Sn4 phase


Autoria(s): Ghosh, C
Data(s)

01/07/2013

Resumo

Important diffusion parameters, such as-parabolic growth constant, integrated diffusivity, ratio of intrinsic diffusivities of species Ni and Sn, Kirkendall marker velocity and the activation energy for diffusion kinetics of binary Ni3Sn4 phase have been investigated with the help of incremental diffusion couple technique (Sn/Ni0.57Sn0.43) in the temperature range 200-150 degrees C. Low activation energy extracted from Arrhenius plot indicates grain boundary controlled diffusion process. The species Sn is three times faster than Ni at 200 degrees C. Further, the activation energy of Sn tracer diffusivity is greater than that of Ni.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/47262/1/Jou_Mate_Scie_Mat_Elec_24-7_2558_2013.pdf

Ghosh, C (2013) Study on important diffusion parameters of binary Ni3Sn4 phase. In: Journal of Materials Science: Materials in Electronics, 24 (7). pp. 2558-2561.

Publicador

Springer

Relação

http://dx.doi.org/10.1007/s10854-013-1133-2

http://eprints.iisc.ernet.in/47262/

Palavras-Chave #Materials Engineering (formerly Metallurgy)
Tipo

Journal Article

PeerReviewed