Synthesis and phase evolution in Nb/Si multilayers obtained by sequential laser ablation


Autoria(s): Kashyap, S; Chattopadhyay, K
Data(s)

2013

Resumo

The paper reports the synthesis of Nb/Si multilayers (48/27 nm) deposited on Si single crystal substrate by sequential laser ablation of elemental Nb and Si. Significant amount of Nb is found in the amorphous Si layer (similar to 25-35 at.% Nb). The Nb layer is found to be polycrystalline. The phase evolution of the multilayer has been studied by annealing at 600 degrees C for various times and carrying out cross sectional electron microscopic studies. We report the formation of amorphous silicide layer at the Nb/Si interface followed by the formation of the NbSi2 phase in the Si layer. Further annealing leads to the nucleation of hexagonal Nb5Si3 grains in amorphous silicide layers at Nb/NbSi2 interfaces. These results are different from those reported for sputter deposited multilayer. (C) 2013 Elsevier B. V. All rights reserved.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/46462/1/thi_sol_fil_531_312_2013.pdf

Kashyap, S and Chattopadhyay, K (2013) Synthesis and phase evolution in Nb/Si multilayers obtained by sequential laser ablation. In: THIN SOLID FILMS, 531 . pp. 312-319.

Publicador

ELSEVIER SCIENCE SA

Relação

http://dx.doi.org/10.1016/j.tsf.2013.01.052

http://eprints.iisc.ernet.in/46462/

Palavras-Chave #Materials Engineering (formerly Metallurgy)
Tipo

Journal Article

PeerReviewed