Synthesis and phase evolution in Nb/Si multilayers obtained by sequential laser ablation
Data(s) |
2013
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Resumo |
The paper reports the synthesis of Nb/Si multilayers (48/27 nm) deposited on Si single crystal substrate by sequential laser ablation of elemental Nb and Si. Significant amount of Nb is found in the amorphous Si layer (similar to 25-35 at.% Nb). The Nb layer is found to be polycrystalline. The phase evolution of the multilayer has been studied by annealing at 600 degrees C for various times and carrying out cross sectional electron microscopic studies. We report the formation of amorphous silicide layer at the Nb/Si interface followed by the formation of the NbSi2 phase in the Si layer. Further annealing leads to the nucleation of hexagonal Nb5Si3 grains in amorphous silicide layers at Nb/NbSi2 interfaces. These results are different from those reported for sputter deposited multilayer. (C) 2013 Elsevier B. V. All rights reserved. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/46462/1/thi_sol_fil_531_312_2013.pdf Kashyap, S and Chattopadhyay, K (2013) Synthesis and phase evolution in Nb/Si multilayers obtained by sequential laser ablation. In: THIN SOLID FILMS, 531 . pp. 312-319. |
Publicador |
ELSEVIER SCIENCE SA |
Relação |
http://dx.doi.org/10.1016/j.tsf.2013.01.052 http://eprints.iisc.ernet.in/46462/ |
Palavras-Chave | #Materials Engineering (formerly Metallurgy) |
Tipo |
Journal Article PeerReviewed |