Electroluminescence from GaN-polymer heterojunction


Autoria(s): Chitara, Basant; Lal, Nidhi; Krupanidhi, SB; Rao, CNR
Data(s)

01/12/2011

Resumo

Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/41002/1/Electroluminescence.pdf

Chitara, Basant and Lal, Nidhi and Krupanidhi, SB and Rao, CNR (2011) Electroluminescence from GaN-polymer heterojunction. In: Journal of Luminescence, 131 (12). pp. 2612-2615.

Publicador

Elsevier Science B.V.

Relação

http://dx.doi.org/10.1016/j.jlumin.2011.04.027

http://eprints.iisc.ernet.in/41002/

Palavras-Chave #Materials Research Centre
Tipo

Journal Article

PeerReviewed