LaNiO3: a promising material for contact with YBa2 Cu3O7-x thin films
Data(s) |
01/12/1995
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Resumo |
Epitaxial LaNiO3 metallic oxide thin films have been grown on c-axis oriented YBa2Cu3O7-delta thin films on LaAlO3 substrates by pulsed laser deposition technique and the interface formed between the two films has been examined by measuring the contact conductance of the same. The specific contact conductance of the interface measured using a modified four probe method was found to be 1.4 to 6 x 10(4) ohm(-1) cm(-2) at 77 K, There are indications that contact conductance can be brought closer to that obtained for noble metal-YBCO interface. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/38062/1/LaNiO3_A_promis.pdf Kumar, D and Satyalakshmi, KM and Hegde, MS and Apte, PR and Pinto, R (1995) LaNiO3: a promising material for contact with YBa2 Cu3O7-x thin films. In: IEEE Transactions on Applied Superconductivity, 5 (4). pp. 3498-3503. |
Publicador |
IEEE |
Relação |
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=482140&tag=1 http://eprints.iisc.ernet.in/38062/ |
Palavras-Chave | #Solid State & Structural Chemistry Unit |
Tipo |
Journal Article PeerReviewed |