LaNiO3: a promising material for contact with YBa2 Cu3O7-x thin films


Autoria(s): Kumar, D; Satyalakshmi, KM; Hegde, MS; Apte, PR; Pinto, R
Data(s)

01/12/1995

Resumo

Epitaxial LaNiO3 metallic oxide thin films have been grown on c-axis oriented YBa2Cu3O7-delta thin films on LaAlO3 substrates by pulsed laser deposition technique and the interface formed between the two films has been examined by measuring the contact conductance of the same. The specific contact conductance of the interface measured using a modified four probe method was found to be 1.4 to 6 x 10(4) ohm(-1) cm(-2) at 77 K, There are indications that contact conductance can be brought closer to that obtained for noble metal-YBCO interface.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/38062/1/LaNiO3_A_promis.pdf

Kumar, D and Satyalakshmi, KM and Hegde, MS and Apte, PR and Pinto, R (1995) LaNiO3: a promising material for contact with YBa2 Cu3O7-x thin films. In: IEEE Transactions on Applied Superconductivity, 5 (4). pp. 3498-3503.

Publicador

IEEE

Relação

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=482140&tag=1

http://eprints.iisc.ernet.in/38062/

Palavras-Chave #Solid State & Structural Chemistry Unit
Tipo

Journal Article

PeerReviewed