Reactive magnetron co?sputtered antiferroelectric lead zirconate thin films
Data(s) |
02/10/1995
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Resumo |
Antiferroelectric lead zirconate thin films were formed on platinum coated silicon substrates by a reactive magnetron co-sputtering method. The films showed (240) preferred orientation. The crystallization temperatures and the preferred orientation were affected by the lead content in the films. The electric field forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature with a maximum polarization value of 36 mu C/cm(2). The average field to excite the ferroelectric state and that for the reversion to the antiferroelectric state were 267 and 104 kV/cm respectively. (C) 1995 American Institute of Physics. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/37877/1/Reactive_magnetron_co-sputtered.pdf Yamakawa, K and Trolier‐McKinstry, S and Dougherty, JP and Krupanidhi, SB (1995) Reactive magnetron co?sputtered antiferroelectric lead zirconate thin films. In: Applied Physics Letters, 67 (14). pp. 2014-2016. |
Publicador |
American Institute of Physics |
Relação |
http://apl.aip.org/resource/1/applab/v67/i14/p2014_s1 http://eprints.iisc.ernet.in/37877/ |
Palavras-Chave | #Materials Engineering (formerly Metallurgy) |
Tipo |
Journal Article PeerReviewed |