A Non Quasi-Static Small Signal Model for Long Channel Symmetric DG MOSFET
| Data(s) |
2010
|
|---|---|
| Resumo |
We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET The model is based on the EKV formalism and is valid in all regions of operation and thus suitable for RF circuit design Proposed model is verified with professional numerical device simulator and excellent agreement is found well beyond the cut-off frequency |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/34070/1/Quasi.pdf Sarkar, Sudipta and Roy, Ananda S and Mahapatra, Santanu (2010) A Non Quasi-Static Small Signal Model for Long Channel Symmetric DG MOSFET. In: 23rd International Conference on VLSI Design/9th International Conference on Embedded Systems, JAN 03-07, 2010, Bangalore, India, pp. 21-26. |
| Publicador |
IEEE |
| Relação |
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5401319 http://eprints.iisc.ernet.in/34070/ |
| Palavras-Chave | #Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology) |
| Tipo |
Conference Paper PeerReviewed |
