Effects of Zr and Ti doping on the dielectric response of CeO2: A comparative first-principles study
Data(s) |
01/11/2010
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Resumo |
Zr doping in ceria (CeO2) results in enhanced static dielectric response compared to pure ceria. On the other hand, Ti doping in ceria keeps its dielectric constant unchanged. We use first-principles density functional theory calculations based on pseudopotentials and a plane wave basis to determine electronic properties and dielectric response of Zr/Ti-doped and oxygen-vacancy-introduced ceria. Softening of phonon modes is responsible for the enhancement in dielectric response of Zr-doped ceria compared to that of pure ceria. The ceria-zirconia mixed oxides should have potential use as high-k materials in the semiconductor industry. (c) 2010 Elsevier Ltd. All rights reserved. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/33961/1/Effects_of_Zr.pdf Dutta, Gargi and Saha, Srijan Kumar and Waghmarea, Umesh V (2010) Effects of Zr and Ti doping on the dielectric response of CeO2: A comparative first-principles study. In: Solid State Communications, 150 (41-42). pp. 2020-2022. |
Publicador |
Elsevier Science |
Relação |
http://dx.doi.org/10.1016/j.ssc.2010.08.014 http://eprints.iisc.ernet.in/33961/ |
Palavras-Chave | #Solid State & Structural Chemistry Unit #Physics |
Tipo |
Journal Article PeerReviewed |