Origin of the Enhanced Photoluminescence from Semiconductor CdSeS Nanocrystals


Autoria(s): Sarma, DD; Nag, Angshuman; Santra, Pralay K; Kumar, Akshay; Sapra, Sameer; Mahadevan, Priya
Data(s)

15/07/2010

Resumo

Internal structures of extraordinarily luminescent semiconductor nanoparticles are probed with photoelectron spectroscopy, establishing a gradient alloy structure as an essential ingredient for the observed phenomenon. Comparative photoluminescence lifetime measurements provide direct evidence for a minimization of nonradiative decay channels because of the removal of interfacial defects due to a progressive change in the lattice parameters in such graded structures, exhibiting a nearly single exponential decay Quantum mechanical, calculations suggest a differential extent of spatial collapse of the electron and the hole wave functions in a way that helps to enhance the photoluminescence efficiency, while at the same time increasing the lifetime of the excited state, as observed in the experiments.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/31214/1/physicals.pdf

Sarma, DD and Nag, Angshuman and Santra, Pralay K and Kumar, Akshay and Sapra, Sameer and Mahadevan, Priya (2010) Origin of the Enhanced Photoluminescence from Semiconductor CdSeS Nanocrystals. In: Journal of Physical Chemistry letters, 1 (14). pp. 2149-2153.

Publicador

American Chemical Society

Relação

http://pubs.acs.org/doi/abs/10.1021/jz100698m

http://eprints.iisc.ernet.in/31214/

Palavras-Chave #Solid State & Structural Chemistry Unit
Tipo

Journal Article

PeerReviewed