Origin of the Enhanced Photoluminescence from Semiconductor CdSeS Nanocrystals
Data(s) |
15/07/2010
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Resumo |
Internal structures of extraordinarily luminescent semiconductor nanoparticles are probed with photoelectron spectroscopy, establishing a gradient alloy structure as an essential ingredient for the observed phenomenon. Comparative photoluminescence lifetime measurements provide direct evidence for a minimization of nonradiative decay channels because of the removal of interfacial defects due to a progressive change in the lattice parameters in such graded structures, exhibiting a nearly single exponential decay Quantum mechanical, calculations suggest a differential extent of spatial collapse of the electron and the hole wave functions in a way that helps to enhance the photoluminescence efficiency, while at the same time increasing the lifetime of the excited state, as observed in the experiments. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/31214/1/physicals.pdf Sarma, DD and Nag, Angshuman and Santra, Pralay K and Kumar, Akshay and Sapra, Sameer and Mahadevan, Priya (2010) Origin of the Enhanced Photoluminescence from Semiconductor CdSeS Nanocrystals. In: Journal of Physical Chemistry letters, 1 (14). pp. 2149-2153. |
Publicador |
American Chemical Society |
Relação |
http://pubs.acs.org/doi/abs/10.1021/jz100698m http://eprints.iisc.ernet.in/31214/ |
Palavras-Chave | #Solid State & Structural Chemistry Unit |
Tipo |
Journal Article PeerReviewed |