Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes
| Data(s) |
16/10/1989
|
|---|---|
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/30325/1/reverse.pdf Natarajan, K and Ramkumar, K and Satyam, M (1989) Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes. In: Physica Status Solidi A, 115 (2). K265-K268. |
| Publicador |
John Wiley and Sons |
| Relação |
http://www3.interscience.wiley.com/journal/112431628/abstract?CRETRY=1&SRETRY=0 http://eprints.iisc.ernet.in/30325/ |
| Palavras-Chave | #Electrical Communication Engineering |
| Tipo |
Editorials/Short Communications PeerReviewed |
