Characteristics of field-effect transistors based on undoped and B-and N-doped few-layer graphenes


Autoria(s): Late, Dattatray J; Ghosh, Anupama; Subrahmanyam, KS; Panchakarla, LS; Krupanidhi, SB; Rao, CNR
Data(s)

01/04/2010

Resumo

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively. (C) 2010 Elsevier Ltd. All rights reserved.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/27436/1/iop.pdf

Late, Dattatray J and Ghosh, Anupama and Subrahmanyam, KS and Panchakarla, LS and Krupanidhi, SB and Rao, CNR (2010) Characteristics of field-effect transistors based on undoped and B-and N-doped few-layer graphenes. In: Solid State Communications, 150 (15-16). pp. 734-738.

Publicador

Elsevier Science

Relação

http://dx.doi.org/10.1016/j.ssc.2010.01.030

http://eprints.iisc.ernet.in/27436/

Palavras-Chave #Materials Research Centre #Solid State & Structural Chemistry Unit
Tipo

Journal Article

PeerReviewed