Intrinsic limits of subthreshold slope in biased bilayer graphene transistor


Autoria(s): Majumdar, Kausik; Murali, Kota VRM; Bhat, Navakanta; Lin, Yu-Ming
Data(s)

22/03/2010

Resumo

In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent band gap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60 mV/decade at room temperature, but much below the results experimentally shown till date, indicating room for technological improvement of bilayer graphene.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/27144/1/intrinsc.pdf

Majumdar, Kausik and Murali, Kota VRM and Bhat, Navakanta and Lin, Yu-Ming (2010) Intrinsic limits of subthreshold slope in biased bilayer graphene transistor. In: Applied Physics Letters, 96 (12).

Publicador

American Institute of Physics

Relação

http://apl.aip.org/applab/v96/i12/p123504_s1

http://eprints.iisc.ernet.in/27144/

Palavras-Chave #Electrical Communication Engineering
Tipo

Journal Article

PeerReviewed