'Wet N2O oxidation' process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application
Contribuinte(s) |
KL, Narasimhan DK, Sharma |
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Data(s) |
2007
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Resumo |
In this paper we first present the 'wet N2O' furnace oxidation process to grow nitrided tunnel oxides in the thickness range 6 to 8 nm on silicon at a temperature of 800 degrees C. Electrical characteristics of MOS capacitors and MOSFETs fabricated using this oxide as gate oxide have been evaluated and the superior features of this oxide are ascertained The frequency response of the interface states, before and after subjecting the MOSFET gate oxide to constant current stress, is studied using a simple analytical model developed in this work. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/26570/1/getPDF.pdf Bhat, KN and Naseer, Babu P (2007) 'Wet N2O oxidation' process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai. |
Publicador |
IEEE |
Relação |
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4472459 http://eprints.iisc.ernet.in/26570/ |
Palavras-Chave | #Centre for Nano Science and Engineering |
Tipo |
Conference Paper PeerReviewed |