Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption
| Data(s) |
15/05/2007
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| Resumo |
The photoluminescence (PL) of a series of (GeS2)(80)(Ga2S3)(20) glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at -> 1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er3+-doped Ge-S-Ga glasses posses PL lifetime values about 3.25 ms. (C) 2007 Elsevier B.V. All rights reserved. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/26310/1/pli.pdf Ivanova, ZG and Aneva, Z and Ganesan, R and Tonchev, D and Gopal, ESR and Rao, KSRK and Allen, TW and DeCorby, RG and Kasap, SO (2007) Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption. In: 15th International Symposium on Non-Oxide Glasses and New Optical Glasses, APR 10-14, 2006, ndian Inst Sci, Bangalore. |
| Publicador |
Elsevier Science |
| Relação |
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TXM-4NC5T91-8&_user=512776&_coverDate=05%2F15%2F2007&_rdoc=1&_fmt=high&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=4da5a5b68f37cc313011a5e0 http://eprints.iisc.ernet.in/26310/ |
| Palavras-Chave | #Physics |
| Tipo |
Conference Paper PeerReviewed |
