Kinetics of Chemical Vapor Deposition
Data(s) |
01/06/1980
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Resumo |
A generalized mass transport model is developed for predicting the rate ofdeposition in chemical vapor deposition (CVD) systems. This combines thegeneralized method of obtaining equilibrium composition, with elemental fluxbalance expressions. This procedure avoids the usual problems encountered incalculating the rates in multicomponent systems, like writing overall reactionschemes. The dependence of multicomponent diffusivities on the fluxes is accountedin this model using an iterative procedure. The model developed isapplied to the deposition of titanium carbide on cemented carbide tool bitsfrom a gas mixture of titanium tetrachloride, toluene, and hydrogen. Experimentaldeposition rates were obtained using a thermogravimetric assembly.Mass transport controlled rates give an order of magnitude estimates of theobserved rates. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/21620/1/fulltext.pdf Subrahmanyam, J and Lahiri, AK and Abraham, KP (1980) Kinetics of Chemical Vapor Deposition. In: Journal of Electrochemical Society, 127 (6). pp. 1394-1399. |
Publicador |
The Electrochemical Society, Inc. |
Relação |
http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JESOAN000127000006001394000001&idtype=cvips&gifs=yes http://eprints.iisc.ernet.in/21620/ |
Palavras-Chave | #Materials Engineering (formerly Metallurgy) |
Tipo |
Journal Article PeerReviewed |