Growth and characterization of $SrBi_{2}Nb_{2}O_{9}$ thin films by pulsed-laser ablation


Autoria(s): Bhattacharyya, S; Bharadwaja, SSN; Krupanidhi, SB
Data(s)

25/10/1999

Resumo

Polycrystalline films of SrBi2Nb2O9 were grown using pulsed-laser ablation. The ferroelectric properties were achieved by low-temperature deposition followed by a subsequent annealing process. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of the films. The hysteresis results showed an excellent square-shaped loop with results (P-r=6 mu C/cm(2), E-c=100 kV/cm) in good agreement with earlier reports. The films also exhibited a dielectric constant of 250 and a dissipation factor of 0.02. The transport studies indicated an ohmic behavior, while higher voltages induced a bulk space charge.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/19593/1/GetPDFServlet.pdf

Bhattacharyya, S and Bharadwaja, SSN and Krupanidhi, SB (1999) Growth and characterization of $SrBi_{2}Nb_{2}O_{9}$ thin films by pulsed-laser ablation. In: Applied Physics Letters, 75 (17). pp. 2656-2658.

Publicador

American Institute of Physics

Relação

http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000075000017002656000001&idtype=cvips&gifs=yes

http://eprints.iisc.ernet.in/19593/

Palavras-Chave #Materials Research Centre
Tipo

Journal Article

PeerReviewed