Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure


Autoria(s): MacLeod, J.M.; Lima, C.P.; Miwa, R.H.; Srivastava, G.P.; McLean, A.B.
Data(s)

2004

Resumo

Experimental studies of Bi heteroepitaxy on Si(001) have recently uncovered a self-organised nanoline motif which has no detectable width dispersion. The Bi lines can be grown with an aspect ratio that is greater than 350 : 1. This paper describes a study of the nanoline geometry and electronic structure using a combination of scanning tunneling microscopy (STM) and ab initio theoretical methods. In particular, the effect that the lines have on Si(001) surface structure at large length scales, l > 100 nm, is studied. It has been found that Bi line growth on surfaces that have regularly spaced single height steps results in a 'preferred' domain orientation.

Identificador

http://eprints.qut.edu.au/89945/

Publicador

Taylor & Francis

Relação

DOI:10.1179/026708304225019894

MacLeod, J.M., Lima, C.P., Miwa, R.H., Srivastava, G.P., & McLean, A.B. (2004) Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure. Materials Science and Technology, 20(8), pp. 951-954.

Fonte

School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty

Tipo

Journal Article