The geometry of Bi nanolines on Si(0 0 1)


Autoria(s): Miwa, R.H.; MacLeod, J.M.; Srivastava, G.P.; McLean, A.B.
Data(s)

15/05/2005

Resumo

A study of the Bi nanoline geometry on Si(0 0 1) has been performed using a combination of ab initio theoretical technique and scanning tunnelling microscopy (STM). Our calculations demonstrate decisively that the recently proposed Haiku geometry is a lower energy configuration than any of the previously proposed line geometries. Furthermore, we have made comparisons between STM constant-current topographs of the lines and Tersoff–Haman STM simulations. Although the Haiku and the Miki geometries both reproduce the main features of the constant-current topographs, the simulated STM images of the Miki geometry have a dark stripe between the dimer rows that does not correspond well with experiment.

Identificador

http://eprints.qut.edu.au/89941/

Publicador

Elsevier

Relação

DOI:10.1016/j.apsusc.2004.10.075

Miwa, R.H., MacLeod, J.M., Srivastava, G.P., & McLean, A.B. (2005) The geometry of Bi nanolines on Si(0 0 1). Applied Surface Science, 244(1-4), pp. 157-160.

Direitos

Copyright 2004 Elsevier B.V.

Fonte

School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty

Palavras-Chave #Silicon surface; Ab initio calculations; Nanolines; Scanning tunnelling microscopy; Semiconductor hetero-epitaxy
Tipo

Journal Article