Pt/WO3 nanoplatelet/SiC Schottky diode based hydrogen gas sensor
Data(s) |
12/03/2012
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Resumo |
This paper presents the fabrication and study of a Schottky diode based on Pt/WO3 nanoplatelet/SiC for H2 gas sensing applications. The nanostructured WO3 films were synthesized from tungsten (sputtered on SiC) via an acidetching method using a 1.5 M HNO3 solution. Scanning electron microscopy of the developed films revealed platelet crystals with thicknesses in the order of 20-60 nm and lengths between 100-700 nm. The current-voltage characteristic and dynamic response of the diodes were measured in the presence of air and 1% H2 gas balanced in air from 25 to 300°C. Upon exposure to 1% H2, voltage shifts of 0.64, 0.93 and 1.14 V were recorded at temperatures of 120, 200 and 300°C, respectively at a constant forward bias current of 500 μA. |
Formato |
application/pdf |
Identificador | |
Publicador |
Springer |
Relação |
http://eprints.qut.edu.au/87264/1/ICNS4%2C%20WO3%20sensing%20paper%202012.pdf http://icns4.nanosharif.ir/proceedings/files/proceedings/APP103.pdf Shafiei, Mahnaz, Yu, Jerry, Sadek, Abu Z., Motta, Nunzio, Kalantar-zadeh, Kourosh, & Wlodarski, Wojtek (2012) Pt/WO3 nanoplatelet/SiC Schottky diode based hydrogen gas sensor. In Proceedings of the 4th International Conference on Nanostructures (ICNS4), Springer, Kish Island, I.R. Iran, pp. 889-891. |
Direitos |
Copyright 2012 [please consult the authors] |
Fonte |
School of Chemistry, Physics & Mechanical Engineering; Faculty of Science and Technology; Institute for Future Environments |
Palavras-Chave | #100700 NANOTECHNOLOGY #100708 Nanomaterials #109900 OTHER TECHNOLOGY #Sensor #Hydrogen #Schottky diode #WO3 nanoplatelet #Acid etching |
Tipo |
Conference Paper |