Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes


Autoria(s): Goh, E.S.M.; Yang, H.Y.; Han, Z.J.; Chen, T.P.; Ostrikov, K.
Data(s)

2012

Resumo

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Identificador

http://eprints.qut.edu.au/74703/

Publicador

American Institute of Physics

Relação

DOI:10.1063/1.4773367

Goh, E.S.M., Yang, H.Y., Han, Z.J., Chen, T.P., & Ostrikov, K. (2012) Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes. Applied Physics Letters, 101(26), pp. 263506-1.

Direitos

Copyright 2012 American Institute of Physics

Fonte

School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty

Tipo

Journal Article