Plasma Enabled Fabrication of Silicon Carbide Nanostructures


Autoria(s): Fang, Jinghua; Levchenko, Igor; Aramesh, Morteza; Rider, Amanda E.; Prawer, Steven; Ostrikov, Kostya
Contribuinte(s)

Li, Handong

Wu, Jiang

Wang, Jiming M.

Data(s)

2013

Resumo

Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.

Identificador

http://eprints.qut.edu.au/74619/

Publicador

Springer New York

Relação

DOI:10.1007/978-1-4614-8169-0_8

Fang, Jinghua, Levchenko, Igor, Aramesh, Morteza, Rider, Amanda E., Prawer, Steven, & Ostrikov, Kostya (2013) Plasma Enabled Fabrication of Silicon Carbide Nanostructures. In Li, Handong, Wu, Jiang, & Wang, Jiming M. (Eds.) Silicon-based Nanomaterials. Springer New York, pp. 161-178.

Direitos

Copyright 2013 Springer Science+Business Media New York

Fonte

School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty

Palavras-Chave #Silicon carbide #Plasma #Chemical vapor deposition #Anodic aluminum oxide membrane
Tipo

Book Chapter