Plasma Enabled Fabrication of Silicon Carbide Nanostructures
Contribuinte(s) |
Li, Handong Wu, Jiang Wang, Jiming M. |
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Data(s) |
2013
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Resumo |
Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed. |
Identificador | |
Publicador |
Springer New York |
Relação |
DOI:10.1007/978-1-4614-8169-0_8 Fang, Jinghua, Levchenko, Igor, Aramesh, Morteza, Rider, Amanda E., Prawer, Steven, & Ostrikov, Kostya (2013) Plasma Enabled Fabrication of Silicon Carbide Nanostructures. In Li, Handong, Wu, Jiang, & Wang, Jiming M. (Eds.) Silicon-based Nanomaterials. Springer New York, pp. 161-178. |
Direitos |
Copyright 2013 Springer Science+Business Media New York |
Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
Palavras-Chave | #Silicon carbide #Plasma #Chemical vapor deposition #Anodic aluminum oxide membrane |
Tipo |
Book Chapter |