Nanoscale surface and interface engineering : why plasma-aided?


Autoria(s): Ostrikov, K.; Xu, S.; Huang, S.Y.; Levchenko, I.
Data(s)

2008

Resumo

This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.

Identificador

http://eprints.qut.edu.au/73970/

Publicador

Elsevier

Relação

DOI:10.1016/j.surfcoat.2008.06.165

Ostrikov, K., Xu, S., Huang, S.Y., & Levchenko, I. (2008) Nanoscale surface and interface engineering : why plasma-aided? Surface and Coatings Technology, 202(22-23), pp. 5314-5318.

Fonte

Science & Engineering Faculty

Palavras-Chave #Nanofilms #p-n junction #PECVD #Plasma sources #Solar cells #Surface and interface properties
Tipo

Journal Article