Self-assembled low-dimensional nanomaterials via low-temperature plasma processing


Autoria(s): Ostrikov, K.; Levchenko, I.; Xu, S.; Huang, S.Y.; Cheng, Q.J.; Long, J.D.; Xu, M.
Data(s)

2008

Resumo

Examples of successful fabrication of low-dimensional semiconducting nanomaterials in the Integrated Plasma-Aided Nanofabrication Facility are shown. Self-assembled size-uniform ZnO nanoparticles, ultra-high-aspect ratio Si nanowires, vertically aligned cadmium sulfide nanostructures, and quarternary semiconducting SiCAlN nanomaterial have been synthesized using inductively coupled plasma-assisted RF magnetron sputtering deposition. The observed increase in crystallinity and growth rates of the nanostructures are explained by using a model of plasma-enhanced adatom surface diffusion under conditions of local energy exchange between the ion flux and the growth surface. Issues related to plasma-based growth of low-dimensional semiconducting nanomaterials are discussed as well. © 2007 Elsevier B.V. All rights reserved.

Identificador

http://eprints.qut.edu.au/73969/

Publicador

Elsevier

Relação

DOI:10.1016/j.tsf.2007.11.045

Ostrikov, K., Levchenko, I., Xu, S., Huang, S.Y., Cheng, Q.J., Long, J.D., & Xu, M. (2008) Self-assembled low-dimensional nanomaterials via low-temperature plasma processing. Thin Solid Films, 516(19), pp. 6609-6615.

Fonte

Science & Engineering Faculty

Palavras-Chave #Low-dimensional semiconductors #Nanoparticles #Nanostructures #Nanowires #Plasma nanofabrication
Tipo

Journal Article