Inductively coupled plasma-assisted RF magnetron sputtering deposition of highly uniform SiC nanoislanded films


Autoria(s): Cheng, Q.; Xu, S.; Huang, S.; Long, J.; Ren, Y.; Xu, M.; Ostrikov, K.
Data(s)

2008

Resumo

A new deposition technique-inductively coupled plasma-assisted RF magnetron sputtering has been developed to fabricate SiC nanoislanded films. In this system, the plasma production and magnetron sputtering can be controlled independently during the discharge. The deposited SiC nanoislanded films are highly uniform, have excellent stoichiometry, have a typical size of 10-45 nm, and contain small (∼ 6 nm) cubic SiC nanocrystallites embedded in an amorphous SiC matrix.

Identificador

http://eprints.qut.edu.au/73823/

Publicador

IEEE

Relação

DOI:10.1109/TPS.2008.927350

Cheng, Q., Xu, S., Huang, S., Long, J., Ren, Y., Xu, M., & Ostrikov, K. (2008) Inductively coupled plasma-assisted RF magnetron sputtering deposition of highly uniform SiC nanoislanded films. IEEE Transactions on Plasma Science, 36(4), pp. 870-871.

Fonte

Science & Engineering Faculty

Palavras-Chave #Amorphous magnetic materials #Films #Inductively coupled plasma (ICP) #Magnetron sputtering #Nanoislanded SiC #Plasmas #Radio frequency #Silicon carbide #Sputtering #Substrates
Tipo

Journal Article