Thinning vertical graphenes, tuning electrical response : from semiconducting to metallic


Autoria(s): Seo, Dong Han; Kumar, Shailesh; Ostrikov, Kostya
Data(s)

2011

Resumo

A simple, uniquely plasma-enabled and environment-friendly process to reduce the thickness of vertically standing graphenes to only 4–5 graphene layers and arranging them in dense, ultra-large surface area, ultra-open-edge-length, self-organized and interconnected networks is demonstrated. The approach for the ultimate thickness reduction to 1–2 graphene layers is also proposed. The vertical graphene networks are optically transparent and show tunable electric properties from semiconducting to semi-metallic and metallic at room and near-room temperature, thus recovering semi-metallic properties of a single-layer graphene.

Formato

application/pdf

Identificador

http://eprints.qut.edu.au/73709/

Publicador

Royal Society of Chemistry

Relação

http://eprints.qut.edu.au/73709/1/73709%28pub%29.pdf

DOI:10.1039/c1jm13835a

Seo, Dong Han, Kumar, Shailesh, & Ostrikov, Kostya (2011) Thinning vertical graphenes, tuning electrical response : from semiconducting to metallic. Journal of Materials Chemistry, 21(41), pp. 16339-16343.

Fonte

Science & Engineering Faculty

Tipo

Journal Article