Thinning vertical graphenes, tuning electrical response : from semiconducting to metallic
Data(s) |
2011
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Resumo |
A simple, uniquely plasma-enabled and environment-friendly process to reduce the thickness of vertically standing graphenes to only 4–5 graphene layers and arranging them in dense, ultra-large surface area, ultra-open-edge-length, self-organized and interconnected networks is demonstrated. The approach for the ultimate thickness reduction to 1–2 graphene layers is also proposed. The vertical graphene networks are optically transparent and show tunable electric properties from semiconducting to semi-metallic and metallic at room and near-room temperature, thus recovering semi-metallic properties of a single-layer graphene. |
Formato |
application/pdf |
Identificador | |
Publicador |
Royal Society of Chemistry |
Relação |
http://eprints.qut.edu.au/73709/1/73709%28pub%29.pdf DOI:10.1039/c1jm13835a Seo, Dong Han, Kumar, Shailesh, & Ostrikov, Kostya (2011) Thinning vertical graphenes, tuning electrical response : from semiconducting to metallic. Journal of Materials Chemistry, 21(41), pp. 16339-16343. |
Fonte |
Science & Engineering Faculty |
Tipo |
Journal Article |