Polycarbonate based non-chemically amplified photoresists for extreme ultraviolet lithography


Autoria(s): Blakey, Idriss; Blinco, James P.; Yu, Anguang; Jack, Kevin S.; Liu, Heping; Leeson, Michael J.; Yeuh, Wang; Younkin, Todd R.; Whittaker, Andrew K.
Data(s)

2010

Resumo

Some initial EUVL patterning results for polycarbonate based non-chemically amplified resists are presented. Without full optimization the developer a resolution of 60 nm line spaces could be obtained. With slight overexposure (1.4 × E0) 43.5 nm lines at a half pitch of 50 nm could be printed. At 2x E0 a 28.6 nm lines at a half pitch of 50 nm could be obtained with a LER that was just above expected for mask roughness. Upon being irradiated with EUV photons, these polymers undergo chain scission with the loss of carbon dioxide and carbon monoxide. The remaining photoproducts appear to be non-volatile under standard EUV irradiation conditions, but do exhibit increased solubility in developer compared to the unirradiated polymer. The sensitivity of the polymers to EUV light is related to their oxygen content and ways to increase the sensitivity of the polymers to 10 mJ cm-2 is discussed.

Identificador

http://eprints.qut.edu.au/70006/

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

Relação

http://proceedings.spiedigitallibrary.org/data/Conferences/SPIEP/6866/763635_1.pdf

DOI:10.1117/12.853620

Blakey, Idriss, Blinco, James P., Yu, Anguang, Jack, Kevin S., Liu, Heping, Leeson, Michael J., Yeuh, Wang, Younkin, Todd R., & Whittaker, Andrew K. (2010) Polycarbonate based non-chemically amplified photoresists for extreme ultraviolet lithography. In Proceedings of SPIE-The International Society for Optical Engineering. SPIE-INT SOC OPTICAL ENGINEERING.

Direitos

Copyright 2010 SPIE

Fonte

School of Chemistry, Physics & Mechanical Engineering; Faculty of Science and Technology

Tipo

Book Chapter