Investigations of the physical origins of etching LiNbO3 during Ti in-diffusion


Autoria(s): Sivan, Vijay; Holland, Anthony; O'Mullane, Anthony P.; Mitchell, Arnan
Data(s)

01/03/2010

Resumo

We investigate the physical origins of etching observed during Ti diffusion. The relationship between observed etch depth and water vapor content in the annealing environment is quantified. The dynamics of the etching process are also identified. It is discovered that water vapor content is essential for etching and that there is a characteristic delay before etching is observed. From these observations we can conclude that the process is electrochemical in nature with ionic defects diffusing into the Ti strip from the lithium niobate and these defects catalyzing the dissociation of water into reactive ions.

Identificador

http://eprints.qut.edu.au/64337/

Publicador

American Institute of Physics

Relação

DOI:10.1063/1.3367742

Sivan, Vijay, Holland, Anthony, O'Mullane, Anthony P., & Mitchell, Arnan (2010) Investigations of the physical origins of etching LiNbO3 during Ti in-diffusion. Applied Physics Letters, 96(12), p. 121913.

Direitos

American Institute of Physics

Fonte

School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty

Tipo

Journal Article