Fabrication of SiGe rings and holes on Si(001) by flash annealing
| Data(s) |
01/10/2013
|
|---|---|
| Resumo |
We show that SiGe islands are transformed into nanoholes and rings by annealing treatments only and without Si capping. Rings are produced by a rapid flash heating at temperatures higher than the melting point of Ge, whereas nanoholes are produced by several minute annealing. The rings are markedly rich in Si with respect to the pristine islands, suggesting that the evolution path from islands to rings is driven by the selective dissolution of Ge occurring at high temperature. |
| Formato |
application/pdf |
| Identificador | |
| Publicador |
Elsevier |
| Relação |
http://eprints.qut.edu.au/60696/1/ApplSurfScie_rev1.pdf DOI:10.1016/j.apsusc.2013.07.024 Persichetti, Luca, Capasso, Andrea, Sgarlata, Anna, Quatela, Alessia, Kaciulis, Saulius, Mezzi, Alessio, Notarianni, Marco, Motta, Nunzio, Fanfoni, Massimo, & Balzarotti, Adalberto (2013) Fabrication of SiGe rings and holes on Si(001) by flash annealing. Applied Surface Science, 283, pp. 813-819. |
| Direitos |
Copyright 2013 Elsevier This is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, [VOL 283, (2013)] DOI: 10.1016/j.apsusc.2013.07.024 |
| Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
| Palavras-Chave | #020406 Surfaces and Structural Properties of Condensed Matter #091203 Compound Semiconductors #100708 Nanomaterials #Heteroepitaxial growth #Quantum dots #Nanorings #Nanoholes |
| Tipo |
Journal Article |
